Radiation Effects in 3D Integrated SOI SRAM Circuits
نویسندگان
چکیده
منابع مشابه
SOI for Frequency Synthesis in RF Integrated Circuits
MARKS, JEFFERY EARL. SOI for Frequency Synthesis in RF Integrated Circuits. (Under the direction of Dr. Wentai Liu.) The purpose of this research has been to explore the use of the Honeywell silicon on insulator fabrication process for use in a frequency synthesizer. The research includes the fabrication of a frequency synthesizer and ring oscillators which are used to evaluate the fabrication ...
متن کاملIntroduction to Substrate Noise in Soi Cmos Integrated Circuits
In this paper an introduction to substrate noise in silicon on insulator (SOI) is given. Differences between substrate noise coupling in conventional bulk CMOS and SOI CMOS are discussed and analyzed by simulations. The efficiency of common substrate noise reduction methods are also analyzed. Simulation results show that the advantage of the substrate isolation in SOI is only valid up to a freq...
متن کاملSOI-Based Integrated Circuits for High-Temperature Applications
Potential shortage of world wide petroleum supply in the near future has created an enormous demand for green vehicles that use higher power electric motor drive in their traction systems. Application of power electronic modules in automobiles has generated the need for reliable and low-cost high-temperature electronics which can operate at the extreme temperatures that exist under the hood. In...
متن کاملVery Low Voltage Testing of SOI Integrated Circuits
Very Low Voltage (VLV) testing has been proposed to increase flaw detection in bulk silicon CMOS integrated circuits and this paper explores these and additional advantages in the context of testing Silicon-On-Insulator (SOI) integrated circuits. In the VLV regime, the history effect, which describes how delays through SOI circuits vary based on a circuit’s recent switching history, is amplifie...
متن کاملThe Effects of Space Radiation on Linear Integrated Circuits
Permanent and transient effects are discussed that are induced in linear integrated circuits by space radiation. Recent developments include enhanced damage at low dose rate, increased damage from protons due to displacement effects, and transients in digital comparators that can cause circuit malfunc-tions. Methods of selecting and testing devices for space applications are discussed, along wi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2011
ISSN: 0018-9499
DOI: 10.1109/tns.2011.2172463